3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems

Adrian Vonsovici, Graham T. Reed, M. Josey, P. Routley, Alan G.R. Evans, F. Namavar

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.

Original languageEnglish (US)
Pages (from-to)352-359
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3896
StatePublished - 1999
EventProceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore
Duration: Nov 30 1999Dec 3 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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