3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems

Adrian Vonsovici; Graham T. Reed; M. Josey; P. Routley; Alan G.R. Evans; F. Namavar

3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems

Adrian Vonsovici, Graham T. Reed, M. Josey, P. Routley, Alan G.R. Evans, F. Namavar

Orthopaedic Surgery & Rehabilitation

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO₂ layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.

Original language	English (US)
Pages (from-to)	352-359
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3896
State	Published - 1999
Event	Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore Duration: Nov 30 1999 → Dec 3 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{a4be1ddf395746ff9114375333551318,

title = "3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems",

abstract = "In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.",

author = "Adrian Vonsovici and Reed, {Graham T.} and M. Josey and P. Routley and Evans, {Alan G.R.} and F. Namavar",

year = "1999",

language = "English (US)",

volume = "3896",

pages = "352--359",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices ; Conference date: 30-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - 3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems

AU - Vonsovici, Adrian

AU - Reed, Graham T.

AU - Josey, M.

AU - Routley, P.

AU - Evans, Alan G.R.

AU - Namavar, F.

PY - 1999

Y1 - 1999

N2 - In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.

AB - In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.

UR - http://www.scopus.com/inward/record.url?scp=0033315172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033315172&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033315172

SN - 0277-786X

VL - 3896

SP - 352

EP - 359

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices

Y2 - 30 November 1999 through 3 December 1999

ER -

3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems

Abstract

ASJC Scopus subject areas

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