A high performance MIM capacitor using HfO 2 dielectrics

Hang Hu, Chunxiang Zhu, Y. F. Lu, M. F. Li, Byung Jin Cho, W. K. Choi

Research output: Contribution to journalArticle

127 Scopus citations

Abstract

Metal-insulator-metal (MIM) capacitors with a 56-nm4hick HfO 2 high-κ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (∼200 °C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO 2 MIM capacitor can provide a higher capacitance density than Si 3N 4 MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 × 10 -9 A/cm 2 at 3 V is achieved. All of these make the HfO 2 MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.

Original languageEnglish (US)
Pages (from-to)514-516
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number9
DOIs
StatePublished - Sep 2002
Externally publishedYes

Keywords

  • High-κ
  • MIM capacitor
  • Temperature coefficient
  • Thin-film devices
  • Voltage linearity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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