A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors

Christopher L. Exstrom; Scott A. Darveau; Joshua S. Edgar; C. J. Curry; Michael P. Hanrahan; Qinglei Ma; Matthew Hilfiker; Aaron Ediger; Natale J. Ianno

doi:10.1557/adv.2016.437

A Low-Temperature Fabrication Method for WSe₂ Films Grown from Nanocrystalline Precursors

Christopher L. Exstrom, Scott A. Darveau, Joshua S. Edgar, C. J. Curry, Michael P. Hanrahan, Qinglei Ma, Matthew Hilfiker, Aaron Ediger, Natale J. Ianno

Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 ^°C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 ^°C for 15 min followed by 550 ^°C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 ^°C.

Original language	English (US)
Pages (from-to)	2821-2826
Number of pages	6
Journal	MRS Advances
Volume	1
Issue number	41
DOIs	https://doi.org/10.1557/adv.2016.437
State	Published - 2016

Keywords

annealing
semiconducting
thin film

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

Access to Document

10.1557/adv.2016.437

Cite this

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title = "A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors",

abstract = "WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.",

keywords = "annealing, semiconducting, thin film",

author = "Exstrom, {Christopher L.} and Darveau, {Scott A.} and Edgar, {Joshua S.} and Curry, {C. J.} and Hanrahan, {Michael P.} and Qinglei Ma and Matthew Hilfiker and Aaron Ediger and Ianno, {Natale J.}",

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AU - Exstrom, Christopher L.

AU - Darveau, Scott A.

AU - Edgar, Joshua S.

AU - Curry, C. J.

AU - Hanrahan, Michael P.

AU - Ma, Qinglei

AU - Hilfiker, Matthew

AU - Ediger, Aaron

AU - Ianno, Natale J.

PY - 2016

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AB - WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.

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