A non-vacuum process for preparing nanocrystalline CuIn1-xGaxSe2 materials involving an open-air solvothermal reaction

J. Olejníček, C. A. Kamler, A. Mirasano, A. L. Martinez-Skinner, M. A. Ingersoll, C. L. Exstrom, S. A. Darveau, J. L. Huguenin-Love, M. Diaz, N. J. Ianno, R. J. Soukup

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58 Scopus citations


A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn1-xGaxSe2 (x=0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diameters ranging between 20 and 40 nm. Raman spectroscopy and X-ray diffraction (XRD) confirm that indium/gallium ratio control is possible over a wide range. The solvothermal reaction step yields a mixture of chalcopyrite and Cu2-xSe. This is converted to pure chalcopyrite product by annealing at 500 °C.

Original languageEnglish (US)
Pages (from-to)8-11
Number of pages4
JournalSolar Energy Materials and Solar Cells
Issue number1
StatePublished - Jan 2010


  • CIGS
  • Chalcopyrites
  • Nanocrystalline
  • Processing
  • Solvothermal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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