A soft-x-ray-emission investigation of cobalt implanted silicon crystals

J. J. Jia, T. A. Callcott, W. L. O'Brien, Q. Y. Dong, D. R. Mueller, J. E. Rubensson, D. L. Ederer, Z. Tan, F. Namavar, J. I. Budnick

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5 Scopus citations

Abstract

The Si L2,3 emission spectra of silicon crystals implanted with Co at doses of (1-8) × 1017 Co/cm2 have been examined using soft-x-ray-emission (SXE) spectroscopy. At the lowest dose, the spectra are little modified from that of crystalline Si, indicating that only a small fraction of Si is in the form of silicides within the probe depth of SXE spectroscopy. For higher doses and implant profiles with Co extending to the surface, there is clear evidence for ordered CoSi2 combined with richer Co phases, but little evidence for pure Si or for ordered regions of CoSi.

Original languageEnglish (US)
Pages (from-to)7800-7804
Number of pages5
JournalJournal of Applied Physics
Volume69
Issue number11
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Jia, J. J., Callcott, T. A., O'Brien, W. L., Dong, Q. Y., Mueller, D. R., Rubensson, J. E., Ederer, D. L., Tan, Z., Namavar, F., & Budnick, J. I. (1991). A soft-x-ray-emission investigation of cobalt implanted silicon crystals. Journal of Applied Physics, 69(11), 7800-7804. https://doi.org/10.1063/1.347508