A spectroscopic study on the luminescence of Er in porous silicon

Uwe Hömmerich, Fereydoon Namavar, Annmarie Cremins, Kevin L. Bray

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Abstract

We report a spectroscopic study on the photoluminescence (PL) of erbium implanted into porous silicon (Er:PSi). Two different porous Si samples were implanted with a dose of 1×1015Er/cm2 at 380 keV and annealed at 650°C for 30 min under identical conditions. Both samples exhibited Er3+ luminescence at 1.54 μm, which was quenched by less than a factor of two between 15 K and room temperature. Visible PL studies of Er implanted and annealed porous Si samples showed broad spectra which peaked at ∼700 nm for sample A and peaked at ∼660 nm for sample B. Sample A showed a four times stronger Er3+ luminescence than that observed from sample B. In contrast, temperature quenching of the Er3+ luminescence was found to be similar or slightly weaker from sample B than from sample A. The spectroscopic data will be discussed in terms of the excitation mechanisms of Er3+ in porous Si nanostructures.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hömmerich, U., Namavar, F., Cremins, A., & Bray, K. L. (1995). A spectroscopic study on the luminescence of Er in porous silicon. Applied Physics Letters.