A surface insulator-to-conductor phase transition in colossal magnetoresistive manganese perovskites thin films

C. N. Borca; Bo Xu; Takashi Komesu; Hae Kyung Jeong; S. H. Liou; P. A. Dowben

A surface insulator-to-conductor phase transition in colossal magnetoresistive manganese perovskites thin films

C. N. Borca, Bo Xu, Takashi Komesu, Hae Kyung Jeong, S. H. Liou, P. A. Dowben

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have observed a distinct surface phase transition for an important class of colossal magnetoresistive materials, La _0.65D _0.35MnO ₃ (with D = Sr, Pb) occurring in a surface layer compositionally different from the bulk. The surface phase transition occurs around 240 K compared to 350 K for the bulk and is fundamentally different. In the bulk, a ferromagnetic metal to paramagnetic 'bad metal' occurs, while the lower-temperature surface transition is from an n-type (in case of La _0.65Sr _0.35MnO ₃) or a p-type (in case of La _0.65Pb _0.35MnO ₃) semiconductor to a semimetal with increasing temperature.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	J Amar, G Gilmer, M V Ramana Murty, J Sanchez JR
Volume	672
State	Published - 2001
Event	Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures - San Francisco, CA, United States Duration: Apr 17 2001 → Apr 20 2001

Other

Other	Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures
Country/Territory	United States
City	San Francisco, CA
Period	4/17/01 → 4/20/01

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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A surface insulator-to-conductor phase transition in colossal magnetoresistive manganese perovskites thin films. / Borca, C. N.; Xu, Bo; Komesu, Takashi et al.
Materials Research Society Symposium - Proceedings. ed. / J Amar; G Gilmer; M V Ramana Murty; J Sanchez JR. Vol. 672 2001.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Borca, CN, Xu, B, Komesu, T, Jeong, HK, Liou, SH & Dowben, PA 2001, A surface insulator-to-conductor phase transition in colossal magnetoresistive manganese perovskites thin films. in J Amar, G Gilmer, MV Ramana Murty & J Sanchez JR (eds), Materials Research Society Symposium - Proceedings. vol. 672, Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures, San Francisco, CA, United States, 4/17/01.

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title = "A surface insulator-to-conductor phase transition in colossal magnetoresistive manganese perovskites thin films",

abstract = "We have observed a distinct surface phase transition for an important class of colossal magnetoresistive materials, La 0.65D 0.35MnO 3 (with D = Sr, Pb) occurring in a surface layer compositionally different from the bulk. The surface phase transition occurs around 240 K compared to 350 K for the bulk and is fundamentally different. In the bulk, a ferromagnetic metal to paramagnetic 'bad metal' occurs, while the lower-temperature surface transition is from an n-type (in case of La 0.65Sr 0.35MnO 3) or a p-type (in case of La 0.65Pb 0.35MnO 3) semiconductor to a semimetal with increasing temperature. ",

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editor = "J Amar and G Gilmer and {Ramana Murty}, {M V} and {Sanchez JR}, J",

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AU - Borca, C. N.

AU - Xu, Bo

AU - Komesu, Takashi

AU - Jeong, Hae Kyung

AU - Liou, S. H.

AU - Dowben, P. A.

PY - 2001

Y1 - 2001

N2 - We have observed a distinct surface phase transition for an important class of colossal magnetoresistive materials, La 0.65D 0.35MnO 3 (with D = Sr, Pb) occurring in a surface layer compositionally different from the bulk. The surface phase transition occurs around 240 K compared to 350 K for the bulk and is fundamentally different. In the bulk, a ferromagnetic metal to paramagnetic 'bad metal' occurs, while the lower-temperature surface transition is from an n-type (in case of La 0.65Sr 0.35MnO 3) or a p-type (in case of La 0.65Pb 0.35MnO 3) semiconductor to a semimetal with increasing temperature.

AB - We have observed a distinct surface phase transition for an important class of colossal magnetoresistive materials, La 0.65D 0.35MnO 3 (with D = Sr, Pb) occurring in a surface layer compositionally different from the bulk. The surface phase transition occurs around 240 K compared to 350 K for the bulk and is fundamentally different. In the bulk, a ferromagnetic metal to paramagnetic 'bad metal' occurs, while the lower-temperature surface transition is from an n-type (in case of La 0.65Sr 0.35MnO 3) or a p-type (in case of La 0.65Pb 0.35MnO 3) semiconductor to a semimetal with increasing temperature.

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M3 - Conference contribution

AN - SCOPUS:0035742663

VL - 672

BT - Materials Research Society Symposium - Proceedings

A2 - Amar, J

A2 - Gilmer, G

A2 - Ramana Murty, M V

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T2 - Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures

Y2 - 17 April 2001 through 20 April 2001

ER -

A surface insulator-to-conductor phase transition in colossal magnetoresistive manganese perovskites thin films

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