The magnetic properties of the soft ferromagnetic layer in magnetic tunnel junctions are one of key factors to determine the performance of magnetoresistance sensors. We use a three-step orthogonal annealing procedure to modify the nanostructures of the free layer in the magnetic tunnel junction to control features such as magnetization reversal, coercivity, exchange field, and tunnel magnetoresistance ratio. We present a sensor with an improved sensitivity as high as 3944%/mT. This magnetic sensor only dissipates 200μW of power while operating under an applied voltage of 1V.
ASJC Scopus subject areas
- Physics and Astronomy(all)