Adjusting magnetic nanostructures for high-performance magnetic sensors

Xiaolu Yin, Ralph Skomski, David Sellmyer, Sy Hwang Liou, Stephen E. Russek, Eric R. Evarts, John Moreland, A. S. Edelstein, L. Yuan, M. L. Yan, J. Shen

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The magnetic properties of the soft ferromagnetic layer in magnetic tunnel junctions are one of key factors to determine the performance of magnetoresistance sensors. We use a three-step orthogonal annealing procedure to modify the nanostructures of the free layer in the magnetic tunnel junction to control features such as magnetization reversal, coercivity, exchange field, and tunnel magnetoresistance ratio. We present a sensor with an improved sensitivity as high as 3944%/mT. This magnetic sensor only dissipates 200μW of power while operating under an applied voltage of 1V.

Original languageEnglish (US)
Article number17E528
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
StatePublished - May 7 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yin, X., Skomski, R., Sellmyer, D., Liou, S. H., Russek, S. E., Evarts, E. R., Moreland, J., Edelstein, A. S., Yuan, L., Yan, M. L., & Shen, J. (2014). Adjusting magnetic nanostructures for high-performance magnetic sensors. Journal of Applied Physics, 115(17), [17E528]. https://doi.org/10.1063/1.4870315