All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region

E. B. Franke; C. L. Trimble; M. Schubert; J. A. Woollam; J. S. Hale

doi:10.1063/1.1288810

All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region

E. B. Franke, C. L. Trimble, M. Schubert, J. A. Woollam, J. S. Hale

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

All-solid-state electrochromic reflectance devices for thermal emittance modulation were designed for operation in the spectral region from mid- to far-infrared wavelengths (2-40 μm). All device constituent layers were grown by magnetron sputtering. The electrochromic (polycrystalline WO₃), ion conductor (Ta₂O₅), and Li⁺ ion-storage layer (amorphous WO₃), optimized for their infrared (IR) optical thicknesses, are sandwiched between a highly IR reflecting Al mirror, and a 90% IR transmissive Al grid top electrode, thereby meeting the requirements for a reversible Li⁺ ion insertion electrochromic device to operate within the 300 K blackbody emission range. Multicycle optical switching and emittance modulation is demonstrated. The measured change in emissivity of the device is to 20%.

Original language	English (US)
Pages (from-to)	930-932
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	7
DOIs	https://doi.org/10.1063/1.1288810
State	Published - Aug 14 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1288810

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@article{b68840db7d4c4ca1b8fc354f3dd9ed6e,

title = "All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region",

abstract = "All-solid-state electrochromic reflectance devices for thermal emittance modulation were designed for operation in the spectral region from mid- to far-infrared wavelengths (2-40 μm). All device constituent layers were grown by magnetron sputtering. The electrochromic (polycrystalline WO3), ion conductor (Ta2O5), and Li+ ion-storage layer (amorphous WO3), optimized for their infrared (IR) optical thicknesses, are sandwiched between a highly IR reflecting Al mirror, and a 90% IR transmissive Al grid top electrode, thereby meeting the requirements for a reversible Li+ ion insertion electrochromic device to operate within the 300 K blackbody emission range. Multicycle optical switching and emittance modulation is demonstrated. The measured change in emissivity of the device is to 20%.",

author = "Franke, {E. B.} and Trimble, {C. L.} and M. Schubert and Woollam, {J. A.} and Hale, {J. S.}",

year = "2000",

month = aug,

day = "14",

doi = "10.1063/1.1288810",

language = "English (US)",

volume = "77",

pages = "930--932",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region

AU - Franke, E. B.

AU - Trimble, C. L.

AU - Schubert, M.

AU - Woollam, J. A.

AU - Hale, J. S.

PY - 2000/8/14

Y1 - 2000/8/14

N2 - All-solid-state electrochromic reflectance devices for thermal emittance modulation were designed for operation in the spectral region from mid- to far-infrared wavelengths (2-40 μm). All device constituent layers were grown by magnetron sputtering. The electrochromic (polycrystalline WO3), ion conductor (Ta2O5), and Li+ ion-storage layer (amorphous WO3), optimized for their infrared (IR) optical thicknesses, are sandwiched between a highly IR reflecting Al mirror, and a 90% IR transmissive Al grid top electrode, thereby meeting the requirements for a reversible Li+ ion insertion electrochromic device to operate within the 300 K blackbody emission range. Multicycle optical switching and emittance modulation is demonstrated. The measured change in emissivity of the device is to 20%.

AB - All-solid-state electrochromic reflectance devices for thermal emittance modulation were designed for operation in the spectral region from mid- to far-infrared wavelengths (2-40 μm). All device constituent layers were grown by magnetron sputtering. The electrochromic (polycrystalline WO3), ion conductor (Ta2O5), and Li+ ion-storage layer (amorphous WO3), optimized for their infrared (IR) optical thicknesses, are sandwiched between a highly IR reflecting Al mirror, and a 90% IR transmissive Al grid top electrode, thereby meeting the requirements for a reversible Li+ ion insertion electrochromic device to operate within the 300 K blackbody emission range. Multicycle optical switching and emittance modulation is demonstrated. The measured change in emissivity of the device is to 20%.

UR - http://www.scopus.com/inward/record.url?scp=0012032233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012032233&partnerID=8YFLogxK

U2 - 10.1063/1.1288810

DO - 10.1063/1.1288810

M3 - Article

AN - SCOPUS:0012032233

SN - 0003-6951

VL - 77

SP - 930

EP - 932

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region

Abstract

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