Stress induced in  oriented Si circular micropillars by coatings of low pressure chemical vapor deposited 10B, SiyN x, and plasma enhanced chemical vapor deposited SiO2 were measured using micro-Raman spectroscopy. Both tensile and compressive strains in the Si micropillars were observed. Exceptionally large stresses were found to exist in some of the measured Si micropillars. The cross-sectional shapes of these structures were shown to be an important factor in correlating their strain concentrations which could fracture the micropillar.
|Original language||English (US)|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 1 2013|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering