Anisotropic Properties of Quasi-1D In₄Se₃: Mechanical Exfoliation, Electronic Transport, and Polarization-Dependent Photoresponse

Theoretical and experimental investigations of various exfoliated samples taken from layered In₄Se₃ crystals are performed. In spite of the ionic character of interlayer interactions in In₄Se₃ and hence much higher calculated cleavage energies compared to graphite, it is possible to produce few-nanometer-thick flakes of In₄Se₃ by mechanical exfoliation of its bulk crystals. The In₄Se₃ flakes exfoliated on Si/SiO₂ have anisotropic electronic properties and exhibit field-effect electron mobilities of about 50 cm² V⁻¹ s⁻¹ at room temperature, which are comparable with other popular transition metal chalcogenide (TMC) electronic materials, such as MoS₂ and TiS₃. In₄Se₃ devices exhibit a visible range photoresponse on a timescale of less than 30 ms. The photoresponse depends on the polarization of the excitation light consistent with symmetry-dependent band structure calculations for the most expected ac cleavage plane. These results demonstrate that mechanical exfoliation of layered ionic In₄Se₃ crystals is possible, while the fast anisotropic photoresponse makes In₄Se₃ a competitive electronic material, in the TMC family, for emerging optoelectronic device applications.