Anisotropic Properties of Quasi-1D In4Se3: Mechanical Exfoliation, Electronic Transport, and Polarization-Dependent Photoresponse

Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Jun Dai, Jehad Abourahma, Duy Le, Archit Dhingra, Simeon J. Gilbert, Pavlo V. Galiy, Taras M. Nenchuk, Dmitry S. Muratov, Talat S. Rahman, Xiao Cheng Zeng, Peter A. Dowben, Alexander Sinitskii

Research output: Contribution to journalArticlepeer-review


Theoretical and experimental investigations of various exfoliated samples taken from layered In4Se3 crystals are performed. In spite of the ionic character of interlayer interactions in In4Se3 and hence much higher calculated cleavage energies compared to graphite, it is possible to produce few-nanometer-thick flakes of In4Se3 by mechanical exfoliation of its bulk crystals. The In4Se3 flakes exfoliated on Si/SiO2 have anisotropic electronic properties and exhibit field-effect electron mobilities of about 50 cm2 V−1 s−1 at room temperature, which are comparable with other popular transition metal chalcogenide (TMC) electronic materials, such as MoS2 and TiS3. In4Se3 devices exhibit a visible range photoresponse on a timescale of less than 30 ms. The photoresponse depends on the polarization of the excitation light consistent with symmetry-dependent band structure calculations for the most expected ac cleavage plane. These results demonstrate that mechanical exfoliation of layered ionic In4Se3 crystals is possible, while the fast anisotropic photoresponse makes In4Se3 a competitive electronic material, in the TMC family, for emerging optoelectronic device applications.

Original languageEnglish (US)
Article number2106459
JournalAdvanced Functional Materials
Issue number52
StatePublished - Dec 22 2021


  • In Se
  • band structures
  • electronic properties
  • mechanical exfoliation
  • photoresponse
  • quasi-1D materials
  • transition metal chalcogenides

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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