Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry

M. Schubert; B. Rheinländer; E. Franke; H. Neumann; J. Hahn; M. Rôder; F. Richter

doi:10.1063/1.118701

Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry

M. Schubert, B. Rheinländer, E. Franke, H. Neumann, J. Hahn, M. Rôder, F. Richter

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

Generalized variable angle spectroscopic ellipsometry (gVASE) over the photon energy range from 1.5 to 3.5 eV has been used to study and distinguish the hexagonal and cubic phases of boron nitride in thin films (50-500 nm) deposited by magnetron sputtering onto (100) silicon. Furthermore, gVASE is used to characterize the anisotropic reflectivity of the hexagonal phase films with different microstructures.

Original language	English (US)
Pages (from-to)	1819-1821
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	14
DOIs	https://doi.org/10.1063/1.118701
State	Published - Apr 7 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.118701

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AU - Schubert, M.

AU - Rheinländer, B.

AU - Franke, E.

AU - Neumann, H.

AU - Hahn, J.

AU - Rôder, M.

AU - Richter, F.

PY - 1997/4/7

Y1 - 1997/4/7

N2 - Generalized variable angle spectroscopic ellipsometry (gVASE) over the photon energy range from 1.5 to 3.5 eV has been used to study and distinguish the hexagonal and cubic phases of boron nitride in thin films (50-500 nm) deposited by magnetron sputtering onto (100) silicon. Furthermore, gVASE is used to characterize the anisotropic reflectivity of the hexagonal phase films with different microstructures.

AB - Generalized variable angle spectroscopic ellipsometry (gVASE) over the photon energy range from 1.5 to 3.5 eV has been used to study and distinguish the hexagonal and cubic phases of boron nitride in thin films (50-500 nm) deposited by magnetron sputtering onto (100) silicon. Furthermore, gVASE is used to characterize the anisotropic reflectivity of the hexagonal phase films with different microstructures.

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Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry

Abstract

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