Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, M. Schubert

Research output: Contribution to journalConference articlepeer-review

42 Scopus citations


We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 × 1017 cm-3 to 9.5 × 1018 cm-3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m* = 0.047m 0 and m* = 0.039m0 for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N, where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.

Original languageEnglish (US)
Pages (from-to)1854-1857
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
StatePublished - 2006
Externally publishedYes
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005

ASJC Scopus subject areas

  • Condensed Matter Physics


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