Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

T. Hofmann; T. Chavdarov; V. Darakchieva; H. Lu; W. J. Schaff; M. Schubert

doi:10.1002/pssc.200565467

Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, M. Schubert

Research output: Contribution to journal › Conference article › peer-review

36 Scopus citations

Abstract

We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 × 10¹⁷ cm^-3 to 9.5 × 10¹⁸ cm^-3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m_⊥* = 0.047m ₀ and m_∥* = 0.039m₀ for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm²/(Vs) to 800 cm²/(Vs) with increase in N, where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.

Original language	English (US)
Pages (from-to)	1854-1857
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565467
State	Published - 2006
Externally published	Yes
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: Aug 28 2005 → Sep 2 2005

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200565467

Cite this

@article{137b94ef22ff40bba9c4ff28d2cf316a,

title = "Anisotropy of the Γ-point effective mass and mobility in hexagonal InN",

abstract = "We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 × 1017 cm-3 to 9.5 × 1018 cm-3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m⊥* = 0.047m 0 and m∥* = 0.039m0 for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N, where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.",

author = "T. Hofmann and T. Chavdarov and V. Darakchieva and H. Lu and Schaff, {W. J.} and M. Schubert",

year = "2006",

doi = "10.1002/pssc.200565467",

language = "English (US)",

volume = "3",

pages = "1854--1857",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

AU - Hofmann, T.

AU - Chavdarov, T.

AU - Darakchieva, V.

AU - Lu, H.

AU - Schaff, W. J.

AU - Schubert, M.

PY - 2006

Y1 - 2006

N2 - We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 × 1017 cm-3 to 9.5 × 1018 cm-3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m⊥* = 0.047m 0 and m∥* = 0.039m0 for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N, where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.

AB - We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 × 1017 cm-3 to 9.5 × 1018 cm-3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m⊥* = 0.047m 0 and m∥* = 0.039m0 for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N, where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.

UR - http://www.scopus.com/inward/record.url?scp=33746355242&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746355242&partnerID=8YFLogxK

U2 - 10.1002/pssc.200565467

DO - 10.1002/pssc.200565467

M3 - Conference article

AN - SCOPUS:33746355242

SN - 1862-6351

VL - 3

SP - 1854

EP - 1857

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this