Annealing study of erbium and oxygen implanted gallium nitride

J. T. Torvik, R. J. Feuerstein, Ch H. Qiu, M. W. Leksono, J. I. Pankove, F. Namavar

Research output: Contribution to journalConference articlepeer-review

20 Scopus citations


A systematic study of photoluminescence (PL) of Er and O ion implanted and annealed n-type GaN grown on R-plane sapphire (Al2O3) was performed. The Er implants ranged from 2×1013 to 1×1015 Er++/cm2, and the O co-implants ranged from 1014 to 1016 O+/cm2. The resulting nine different combinations of GaN:Er,O were annealed at 600°C (4 hrs. in N2), 700°C (1.5 hrs. in N2), 800°C (0.75 hr. in NH3), and 900°C (0.5 hr. in NH3). Following each annealing step, the Er3+-related PL at 1.54 μm was measured from each sample at 77 K, when pumped directly with ≈135 mW of power at 980 nm. The three samples with the highest dose of Er (1×1015 Er++/cm2), regardless of O co-dopant dose, yielded the strongest PL peak intensity at 1.54 μm after all the anneals. The integrated PL from 1.52 to 1.58 μm was reduced by 62% when going from 77 K to room temperature (RT).

Original languageEnglish (US)
Pages (from-to)199-204
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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