Pinning forces in chemical-vapour-deposited (CVD) Nb3Ge1-xMx pseudo-binaries, where M = Ga or Sn, and 0≤x≤0·02, have been measured as a function of the reduced field. An absence of scaling of the flux-pinning-force density with reduced field is attributed to sample inhomogeneity. The reduced field is re-defined in a way that excludes the very-high-field-critical-current behaviour. Pinning forces as a function of this re-defined field obey a universal scaling law, i.e. the same function describes the normalized pinning for all temperatures and samples.
|Original language||English (US)|
|Number of pages||4|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|State||Published - Oct 1978|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Physics and Astronomy(all)