Abstract
Free carrier concentration profiles were determined by Fourier Transform Infrared (FTIR) variable angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. In this study, the carrier profiles were modeled as graded multilayers that were constrained to a specific functional form (e.g. Gaussian, complementary error function) when appropriate. Carrier profiles from boron and arsenic ion-implanted that had been subjected to furnace or Rapid Thermal Annealing (RTA) annealed silicon wafers were compared to Spreading Resistance Probe and Secondary Ion Mass Spectrometry profiles. p - p + doped epitaxial silicon samples (before and after annealing) were also measured and the results were compared to theory.
Original language | English (US) |
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Pages (from-to) | 661-666 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 313-314 |
DOIs | |
State | Published - Feb 13 1998 |
Keywords
- Dopant distribution
- Free carrier absorption
- Infrared ellipsometry
- Semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry