Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles

Thomas E. Tiwald, Daniel W. Thompson, John A. Woollam, Wayne Paulson, Robert Hance

Research output: Contribution to journalArticle

88 Scopus citations

Abstract

Free carrier concentration profiles were determined by Fourier Transform Infrared (FTIR) variable angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. In this study, the carrier profiles were modeled as graded multilayers that were constrained to a specific functional form (e.g. Gaussian, complementary error function) when appropriate. Carrier profiles from boron and arsenic ion-implanted that had been subjected to furnace or Rapid Thermal Annealing (RTA) annealed silicon wafers were compared to Spreading Resistance Probe and Secondary Ion Mass Spectrometry profiles. p - p + doped epitaxial silicon samples (before and after annealing) were also measured and the results were compared to theory.

Original languageEnglish (US)
Pages (from-to)661-666
Number of pages6
JournalThin Solid Films
Volume313-314
DOIs
StatePublished - Feb 13 1998

Keywords

  • Dopant distribution
  • Free carrier absorption
  • Infrared ellipsometry
  • Semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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