Abstract
Spectroscopic ellipsometry is used to determine optical constants, layer thicknesses in multilayer stacks, and microstructure (voids, alloy fraction, or mixed phase composition), and is a well-developed technique for analysis of optical thin films. Ellipsometers now cover from 140 nm (≈ 9 eV) in the vacuum-ultraviolet to 200 microns (50cm-1) in the far infrared. Generalized anisotropy and depolarization are measurable using rotating compensator ellipsometers or controlled retarders for partial Mueller Matrix analysis. Rotating compensator ellipsometers allow accurate and rapid in situ diagnostics, including window birefringence calibration. Steady progress has been made in both ex situ and in situ ellipsometry hardware, software, and applications. These advances are reviewed and examples given.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 393-404 |
| Number of pages | 12 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4932 |
| DOIs | |
| State | Published - 2003 |
| Event | Proceedings Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization - Boulder, CO, United States Duration: Sep 16 2002 → Sep 18 2002 |
Keywords
- Generalized ellipsometry
- Infrared spectroscopic ellipsometry
- Optical anisotropy
- Optical thin films
- Vacuum ultraviolet
- Visible
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering