Arsenic implantation into GaAs: a SOI technology for compound semiconductors?

Zuzanna Liliental-Weber, F. Namavar, A. Claverie

Research output: Contribution to journalArticle

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Abstract

Solid-phase epitaxial regrowth of As+-implanted GaAs has produced As precipitates with the same structure and orientation relationship as has been observed in annealed GaAs layers grown at low temperature by molecular-beam epitaxy. The presence of these precipitates was revealed by transmission electron microscopy. These layers appear to be semi-insulating. In order to obtain these results, implantation and annealing conditions need to be carefully selected. Annealing of implanted samples at 600°C for 10, 20 and 30 min does not lead to the undulation of the sample surface. Therefore any device structures such as semiconductor-on-insulator can be grown on this regrown material.

Original languageEnglish (US)
Pages (from-to)570-574
Number of pages5
JournalUltramicroscopy
Volume52
Issue number3-4
DOIs
Publication statusPublished - Dec 1993

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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