Solid-phase epitaxial regrowth of As+-implanted GaAs has produced As precipitates with the same structure and orientation relationship as has been observed in annealed GaAs layers grown at low temperature by molecular-beam epitaxy. The presence of these precipitates was revealed by transmission electron microscopy. These layers appear to be semi-insulating. In order to obtain these results, implantation and annealing conditions need to be carefully selected. Annealing of implanted samples at 600°C for 10, 20 and 30 min does not lead to the undulation of the sample surface. Therefore any device structures such as semiconductor-on-insulator can be grown on this regrown material.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics