Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN

V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Homme, B. A. Haskell, P. T. Fini, S. Nakamura

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4 Scopus citations

Abstract

Generalized infrared spectroscopic ellipsometry was applied to study the vibrational properties of anisotropically strained a-plane GaN films with different thicknesses. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and strain-free frequency of the GaN A1(TO) mode. These results are compared with previous theoretical and experimental findings and discussed.

Original languageEnglish (US)
Pages (from-to)1594-1598
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number7
DOIs
StatePublished - Jun 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Darakchieva, V., Paskova, T., Paskov, P. P., Arwin, H., Schubert, M., Monemar, B., Figge, S., Homme, D., Haskell, B. A., Fini, P. T., & Nakamura, S. (2006). Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN. Physica Status Solidi (B) Basic Research, 243(7), 1594-1598. https://doi.org/10.1002/pssb.200565400