Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN

V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Homme, B. A. Haskell, P. T. Fini, S. Nakamura

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Generalized infrared spectroscopic ellipsometry was applied to study the vibrational properties of anisotropically strained a-plane GaN films with different thicknesses. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and strain-free frequency of the GaN A1(TO) mode. These results are compared with previous theoretical and experimental findings and discussed.

Original languageEnglish (US)
Pages (from-to)1594-1598
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number7
DOIs
StatePublished - Jun 2006
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN'. Together they form a unique fingerprint.

Cite this