Backside sample preparation with laser-enhanced chemical etching for infrared photon imaging

Qin Deng, Zhihong Mai, Ran He, Tawei Tao, Jeffrey Lam, Yongfeng Lu

Research output: Contribution to journalConference articlepeer-review

Abstract

Backside sample preparation has been widely used in failure analysis of integrated circuits (IC). Conventional backside sample preparation methodologies include mechanical grinding, parallel polishing, chemical etching with mask, etc. The mechanical grinding or polishing could induce mechanical damage in the Si. Normally the thickness after sample preparation with mechanical methods is about 100 urn and above. Chemical etching can be applied to get thinner sample, e.g., less than 30 um and below. For a sample with thickness less than 30 urn, mechanical support is needed. In order to make selective etching on substrates, a patterned mask has to be applied on the sample. In this paper, we will present a new methodology for backside sample preparation, which uses laser-enhanced chemical etching to open a trench on Si from the backside. This methodology can get thinner backside sample with strong mechanical support from the substrate.

Original languageEnglish (US)
Article number62
Pages (from-to)432-435
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5713
DOIs
StatePublished - 2005
EventPhoton Processing in Microelectronics and Photonics IV - San Jose, CA, United States
Duration: Jan 24 2005Jan 27 2005

Keywords

  • Backside
  • Infrared Image
  • Laser
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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