Bending in HVPE GaN free-standing films: Effects of laser lift-off, polishing and high-pressure annealing

T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suski, N. Ashkenov, M. Schubert, D. Hommel

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

We have studied the effects of laser lift-off and polishing processes on the bending of free-standing HVPE grown GaN thick films. Their structural characteristics were accessed by reciprocal space mapping and lattice parameters measurements as well as by Raman scattering and photoluminescence. The in-plane strain difference between the two faces was found to have determining effect on the bending of the free-standing films. Removing the high-defect-density near-interface region either by melting caused by laser lift-off, or by polishing, or by point defects dissociation caused by high-pressure annealing was found to lead to flattening of the strain distribution along the film thickness and a significant reduction of the bending of the free-standing films.

Original languageEnglish (US)
Pages (from-to)1475-1478
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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