Bistable memory effect in chromium oxide junctions

A. Sokolov; C. S. Yang; E. Ovtchenkov; L. Yuan; S. H. Liou; B. Doudin

Bistable memory effect in chromium oxide junctions

A. Sokolov, C. S. Yang, E. Ovtchenkov, L. Yuan, S. H. Liou, B. Doudin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Magnetotransport properties of granular CrO ₂/Cr ₂O ₃ films made of CrO ₂ crystals covered by 1-2 nm native insulating Cr ₂O ₃ are presented. Electrical properties of a limited number of grains measured in series and parallel (10 to 15 grains) reveal intergrain tunneling characteristics. At lowest temperatures, a well pronounced zero bias anomaly indicates that impurities in the junctions block the electronic flow. Hysteresis in the IV curves are observed at intermediate temperatures on zero-field cooled samples. Changing the polarity of a short excitation pulse (100ns) of amplitude smaller than 1 V triggers a change in the zero-bias resistance by 10-50%. These states are stable and well reproducible in the temperature interval ranging from 100K to 250K. Applying an external magnetic field cancels the IV hysteresis. The resistance of the devices in the kΩ range, the potential high-speed for writing and reading the resistance sate, make these systems interesting candidates for magnetic non-volatile memories.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	S. Zhang, W. Kuch, G. Guntherodt, C. Broholm, A.D. Kent
Pages	139-144
Number of pages	6
Volume	746
State	Published - 2002
Event	Magnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization - Boston, MA, United States Duration: Dec 1 2002 → Dec 5 2002

Other

Other	Magnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization
Country/Territory	United States
City	Boston, MA
Period	12/1/02 → 12/5/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Sokolov, A, Yang, CS, Ovtchenkov, E, Yuan, L, Liou, SH & Doudin, B 2002, Bistable memory effect in chromium oxide junctions. in S Zhang, W Kuch, G Guntherodt, C Broholm & AD Kent (eds), Materials Research Society Symposium - Proceedings. vol. 746, pp. 139-144, Magnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization, Boston, MA, United States, 12/1/02.

@inproceedings{223fc605597841299f937cbf9a908acf,

title = "Bistable memory effect in chromium oxide junctions",

abstract = "Magnetotransport properties of granular CrO 2/Cr 2O 3 films made of CrO 2 crystals covered by 1-2 nm native insulating Cr 2O 3 are presented. Electrical properties of a limited number of grains measured in series and parallel (10 to 15 grains) reveal intergrain tunneling characteristics. At lowest temperatures, a well pronounced zero bias anomaly indicates that impurities in the junctions block the electronic flow. Hysteresis in the IV curves are observed at intermediate temperatures on zero-field cooled samples. Changing the polarity of a short excitation pulse (100ns) of amplitude smaller than 1 V triggers a change in the zero-bias resistance by 10-50%. These states are stable and well reproducible in the temperature interval ranging from 100K to 250K. Applying an external magnetic field cancels the IV hysteresis. The resistance of the devices in the kΩ range, the potential high-speed for writing and reading the resistance sate, make these systems interesting candidates for magnetic non-volatile memories. ",

author = "A. Sokolov and Yang, {C. S.} and E. Ovtchenkov and L. Yuan and Liou, {S. H.} and B. Doudin",

year = "2002",

language = "English (US)",

volume = "746",

pages = "139--144",

editor = "S. Zhang and W. Kuch and G. Guntherodt and C. Broholm and A.D. Kent",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Magnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization ; Conference date: 01-12-2002 Through 05-12-2002",

}

TY - GEN

T1 - Bistable memory effect in chromium oxide junctions

AU - Sokolov, A.

AU - Yang, C. S.

AU - Ovtchenkov, E.

AU - Yuan, L.

AU - Liou, S. H.

AU - Doudin, B.

PY - 2002

Y1 - 2002

N2 - Magnetotransport properties of granular CrO 2/Cr 2O 3 films made of CrO 2 crystals covered by 1-2 nm native insulating Cr 2O 3 are presented. Electrical properties of a limited number of grains measured in series and parallel (10 to 15 grains) reveal intergrain tunneling characteristics. At lowest temperatures, a well pronounced zero bias anomaly indicates that impurities in the junctions block the electronic flow. Hysteresis in the IV curves are observed at intermediate temperatures on zero-field cooled samples. Changing the polarity of a short excitation pulse (100ns) of amplitude smaller than 1 V triggers a change in the zero-bias resistance by 10-50%. These states are stable and well reproducible in the temperature interval ranging from 100K to 250K. Applying an external magnetic field cancels the IV hysteresis. The resistance of the devices in the kΩ range, the potential high-speed for writing and reading the resistance sate, make these systems interesting candidates for magnetic non-volatile memories.

AB - Magnetotransport properties of granular CrO 2/Cr 2O 3 films made of CrO 2 crystals covered by 1-2 nm native insulating Cr 2O 3 are presented. Electrical properties of a limited number of grains measured in series and parallel (10 to 15 grains) reveal intergrain tunneling characteristics. At lowest temperatures, a well pronounced zero bias anomaly indicates that impurities in the junctions block the electronic flow. Hysteresis in the IV curves are observed at intermediate temperatures on zero-field cooled samples. Changing the polarity of a short excitation pulse (100ns) of amplitude smaller than 1 V triggers a change in the zero-bias resistance by 10-50%. These states are stable and well reproducible in the temperature interval ranging from 100K to 250K. Applying an external magnetic field cancels the IV hysteresis. The resistance of the devices in the kΩ range, the potential high-speed for writing and reading the resistance sate, make these systems interesting candidates for magnetic non-volatile memories.

UR - http://www.scopus.com/inward/record.url?scp=0038746620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038746620&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0038746620

VL - 746

SP - 139

EP - 144

BT - Materials Research Society Symposium - Proceedings

A2 - Zhang, S.

A2 - Kuch, W.

A2 - Guntherodt, G.

A2 - Broholm, C.

A2 - Kent, A.D.

T2 - Magnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization

Y2 - 1 December 2002 through 5 December 2002

ER -

Bistable memory effect in chromium oxide junctions

Abstract

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ASJC Scopus subject areas

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