Bistable memory effect in chromium oxide junctions

A. Sokolov, C. S. Yang, E. Ovtchenkov, L. Yuan, S. H. Liou, B. Doudin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Magnetotransport properties of granular CrO 2/Cr 2O 3 films made of CrO 2 crystals covered by 1-2 nm native insulating Cr 2O 3 are presented. Electrical properties of a limited number of grains measured in series and parallel (10 to 15 grains) reveal intergrain tunneling characteristics. At lowest temperatures, a well pronounced zero bias anomaly indicates that impurities in the junctions block the electronic flow. Hysteresis in the IV curves are observed at intermediate temperatures on zero-field cooled samples. Changing the polarity of a short excitation pulse (100ns) of amplitude smaller than 1 V triggers a change in the zero-bias resistance by 10-50%. These states are stable and well reproducible in the temperature interval ranging from 100K to 250K. Applying an external magnetic field cancels the IV hysteresis. The resistance of the devices in the kΩ range, the potential high-speed for writing and reading the resistance sate, make these systems interesting candidates for magnetic non-volatile memories.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS. Zhang, W. Kuch, G. Guntherodt, C. Broholm, A.D. Kent
Number of pages6
StatePublished - 2002
EventMagnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization - Boston, MA, United States
Duration: Dec 1 2002Dec 5 2002


OtherMagnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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