Building the quasi one dimensional transistor from 2D materials

Pavlo V. Galiy, Michael Randle, Alexey Lipatov, Lu Wang, Simeon Gilbert, Nataliia Vorobeva, Avinash Kumar, Chun Pui Kwan, Jubin Nathawat, Bilal Barut, Shenchu Yin, Nargess Arabchigavkani, Taras M. Nenchuk, Takashi Komesu, Keke He, Andrew Yost, Uttam Singisetti, Wai Ning Mei, Alexander Sinitskii, Jonathan P. BirdPeter A. Dowben

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Here we describe some preliminary device results from field effect transistors made from metal trichalcogenides. Although not much investigated, is both promise and room for improvement. Improvements could come from better contacts and lower semiconductor channel defect densities, in metal trichalcogenides transistors. Devices with ohmic contacts have now been fabricated, and the surface termination of these materials modeled by density functional theory.

Original languageEnglish (US)
Title of host publication2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering, UKRCON 2019 - Proceedings
EditorsMariya Antyufeyeva
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages679-682
Number of pages4
ISBN (Electronic)9781728138824
DOIs
StatePublished - Jul 2019
Event2nd IEEE Ukraine Conference on Electrical and Computer Engineering, UKRCON 2019 - Lviv, Ukraine
Duration: Jul 2 2019Jul 6 2019

Publication series

Name2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering, UKRCON 2019 - Proceedings

Conference

Conference2nd IEEE Ukraine Conference on Electrical and Computer Engineering, UKRCON 2019
CountryUkraine
CityLviv
Period7/2/197/6/19

Keywords

  • InSe
  • Novel materials for beyond CMOS
  • Quasi one dimensional semiconductors
  • TiS

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Vision and Pattern Recognition
  • Signal Processing
  • Safety, Risk, Reliability and Quality
  • Instrumentation

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