Carbon nanotube-based nonvolatile random access memory for molecular computing

Thomas Rueckes, Kyoungha Kim, Ernesto Joselevich, Greg Y. Tseng, Chin Li Cheung, Charles M. Lieber

Research output: Contribution to journalArticle

1525 Scopus citations

Abstract

A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube molecular wires making up the devices. These reversible, bistable device elements could be used to construct nonvolatile random access memory and logic function tables at an integration level approaching 1012 elements per square centimeter and an element operation frequency in excess of 100 gigahertz. The viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.

Original languageEnglish (US)
Pages (from-to)94-97
Number of pages4
JournalScience
Volume289
Issue number5476
DOIs
StatePublished - Jul 7 2000

ASJC Scopus subject areas

  • General

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    Rueckes, T., Kim, K., Joselevich, E., Tseng, G. Y., Cheung, C. L., & Lieber, C. M. (2000). Carbon nanotube-based nonvolatile random access memory for molecular computing. Science, 289(5476), 94-97. https://doi.org/10.1126/science.289.5476.94