Carbon Nitride Thin Films Deposited by Nitrogen-Ion-Assisted Laser Ablation of Graphite

Z. M. Ren, Y. F. Lu, H. Q. Ni, Z. F. He, D. S.H. Chan, T. S. Low, K. R.P. Gamani, G. Chen, K. Li

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Carbon nitride thin films were deposited on silicon wafers by pulsed KrF Excimer (wavelength 248 inn, duration 23 ns) ablation of graphite. Different excimer fluences and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. In another case, a Kaufmann-type ion source was used to produce a nitrogen ion beam to assist the deposition process. X-ray photoelectron spectroscopes (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin fthns. The thin films deposited in nitrogen atmosphere had N/C ratio of 0.42, whilst those deposited with assistance of nitrogen ion beam bombardment had N/C = 0.43. The dependence of the optical parameters of the deposited films, the refmctive n and extinction coefficient k, were studied by Ellipsometry.

Original languageEnglish (US)
Pages (from-to)101-109
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3550
DOIs
StatePublished - Aug 15 1998
EventLaser Processing of Materials and Industrial Applications II 1998 - Beijing, China
Duration: Sep 16 1998Sep 19 1998

Keywords

  • Carbon nitride
  • Ellipsometry
  • Laser ablation
  • Thin films
  • Xps

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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