Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates

C. H. Qiu, M. W. Leksono, J. I. Pankove, J. T. Torvik, R. J. Feuerstein, F. Namavar

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Abstract

The cathodoluminescence (CL) of erbium and oxygen coimplanted GaN (GaN:Er:O) and sapphire (sapphire:Er:O) was studied as a function of temperature. Following annealing, the 1.54 μm intra-4f-shell emission line was observed in the temperature range of 6-380 K. As the temperature increased from 6 K to room temperature, the integrated intensity of the infrared peak decreased by less than 5% for GaN:Er:O, while it decreased by 18% for sapphire:Er:O. The observation of minimal thermal quenching by CL suggests that Er and O doped GaN is a promising material for electrically pumped room-temperature optical devices emitting at 1.54 μm.

Original languageEnglish (US)
Pages (from-to)562
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Qiu, C. H., Leksono, M. W., Pankove, J. I., Torvik, J. T., Feuerstein, R. J., & Namavar, F. (1995). Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates. Applied Physics Letters, 562. https://doi.org/10.1063/1.114013