TY - JOUR
T1 - Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
AU - Armakavicius, Nerijus
AU - Bouhafs, Chamseddine
AU - Stanishev, Vallery
AU - Kühne, Philipp
AU - Yakimova, Rositsa
AU - Knight, Sean
AU - Hofmann, Tino
AU - Schubert, Mathias
AU - Darakchieva, Vanya
N1 - Funding Information:
The authors would like to acknowledge financial support from the Swedish Research Council (VR Contract 2013-5580 ), the Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program Grants No. 2011-03486 and 2014-04712 , the Swedish foundation for strategic research (SSF) under Grants No. FFL12-0181 and No. RIF14-055 , the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO Mat LiU No. 2009 00971 ), the FP7 EU project Nano-Rf under the Grant Agreement No. FP7-ICT-2011-8 , the European Union Seventh Framework Programme under Grant Agreement No. 604391 Graphene Flagship, the National Science Foundation (NSF) through the Center for Nanohybrid Functional Materials ( EPS-1004094 ), the Nebraska Materials Research Science and Engineering Center ( DMR-1420645 ), and awards CMMI 1337856 and EAR 1521428 .
Funding Information:
The authors would like to acknowledge financial support from the Swedish Research Council (VR Contract 2013-5580), the Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program Grants No. 2011-03486 and 2014-04712, the Swedish foundation for strategic research (SSF) under Grants No. FFL12-0181 and No. RIF14-055, the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Link?ping University (Faculty Grant SFO Mat LiU No. 2009 00971), the FP7 EU project Nano-Rf under the Grant Agreement No. FP7-ICT-2011-8, the European Union Seventh Framework Programme under Grant Agreement No. 604391 Graphene Flagship, the National Science Foundation (NSF) through the Center for Nanohybrid Functional Materials (EPS-1004094), the Nebraska Materials Research Science and Engineering Center (DMR-1420645), and awards CMMI 1337856 and EAR 1521428.
Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10 12 cm −2 range and a free hole mobility parameter as high as 1550 cm 2 /Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm 2 /Vs and an order of magnitude higher free electron density in the low 10 13 cm −2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
AB - Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10 12 cm −2 range and a free hole mobility parameter as high as 1550 cm 2 /Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm 2 /Vs and an order of magnitude higher free electron density in the low 10 13 cm −2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
KW - Epitaxial graphene
KW - Free charge carrier properties
KW - THz optical Hall effect
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U2 - 10.1016/j.apsusc.2016.10.023
DO - 10.1016/j.apsusc.2016.10.023
M3 - Article
AN - SCOPUS:85005939271
VL - 421
SP - 357
EP - 360
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -