TY - JOUR
T1 - Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
AU - Armakavicius, Nerijus
AU - Bouhafs, Chamseddine
AU - Stanishev, Vallery
AU - Kühne, Philipp
AU - Yakimova, Rositsa
AU - Knight, Sean
AU - Hofmann, Tino
AU - Schubert, Mathias
AU - Darakchieva, Vanya
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10 12 cm −2 range and a free hole mobility parameter as high as 1550 cm 2 /Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm 2 /Vs and an order of magnitude higher free electron density in the low 10 13 cm −2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
AB - Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10 12 cm −2 range and a free hole mobility parameter as high as 1550 cm 2 /Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm 2 /Vs and an order of magnitude higher free electron density in the low 10 13 cm −2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
KW - Epitaxial graphene
KW - Free charge carrier properties
KW - THz optical Hall effect
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U2 - 10.1016/j.apsusc.2016.10.023
DO - 10.1016/j.apsusc.2016.10.023
M3 - Article
AN - SCOPUS:85005939271
VL - 421
SP - 357
EP - 360
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -