@inproceedings{848c8f211e7a401cb7b828411f9d9a43,
title = "Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures",
abstract = "Arsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.",
author = "Fereydoon Namavar and N. Kalkhoran and A. Cremins and S. Vernon",
year = "1994",
language = "English (US)",
isbn = "1558992154",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "51--56",
editor = "Garito, {Anthony F.} and Jen, {Alex K-Y.} and Lee, {Charles Y-C.} and Dalton, {Larry R.}",
booktitle = "Materials Synthesis and Processing Using Ion Beams",
note = "Proceedings of the MRS 1993 Fall Meeting ; Conference date: 29-11-1993 Through 03-12-1993",
}