Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures

Fereydoon Namavar, N. Kalkhoran, A. Cremins, S. Vernon

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Arsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.

Original languageEnglish (US)
Title of host publicationMaterials Synthesis and Processing Using Ion Beams
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558992154
StatePublished - 1994
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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