Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures

Engineering & Materials Science

• Metallorganic chemical vapor deposition 100%
• Arsenic 93%
• Metals 24%
• Semiconductor materials 22%
• MESFET devices 20%
• Molecular beam epitaxy 19%
• Buffer layers 18%
• Passivation 15%
• Oxide semiconductors 15%
• High electron mobility transistors 14%
• Electric breakdown 14%
• Field effect transistors 13%
• Precipitates 13%
• Annealing 12%
• Radiation 10%
• Hardness 10%
• Networks (circuits) 6%
• Temperature 5%

Physics & Astronomy

• arsenic 68%
• metalorganic chemical vapor deposition 60%
• characterization 35%
• implantation 33%
• MIS (semiconductors) 28%
• field effect transistors 19%
• electrical resistivity 16%
• high electron mobility transistors 13%
• electrical faults 12%
• isolation 12%
• passivity 11%
• CMOS 11%
• surface layers 11%
• precipitates 11%
• molecular beam epitaxy 10%
• buffers 10%
• leakage 10%
• hardness 9%
• insulators 9%
• annealing 7%
• radiation 6%
• metals 6%

Chemical Compounds

• Nonconductor 53%
• Semiconductor 48%
• Radiation Hardness 29%
• Breakdown Voltage 23%
• Molecular Beam Epitaxy 22%
• Metal 21%
• Application 19%
• Electron Mobility 18%
• Field Effect 15%
• Metal Oxide 13%
• Annealing 12%
• Buffer Solution 10%
• Surface 10%