Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition

W. L. Zhou, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono, J. I. Pankove

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5 Scopus citations


SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO2/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO) CVD to produce a GaN/SiC/Si/SiO2Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high-resolution (HR) TEM from cross-sectional view. The GaN layer was found to consist of predominantly hexagonal gallium nitride (h-GaN), and a small fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and SiC (3C-SiC) was found to be (0001)GaN∥(111)SiC; [112̄0]GaN∥[11̄0]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN∥(001)SiC; [11̄0]GaN∥[11̄0]SiC with respect to 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. The defects in both h-GaN and c-GaN are also discussed.

Original languageEnglish (US)
Pages (from-to)1171-1174
Number of pages4
JournalJournal of Materials Research
Issue number4
StatePublished - Apr 1999
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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