Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry

Kenneth G. Merkel; John A. Woollam

doi:10.1143/JJAP.28.1118

Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry

Kenneth G. Merkel, John A. Woollam

Research output: Contribution to journal › Article › peer-review

Abstract

Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 舠barrier舡 and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.

Original language	English (US)
Pages (from-to)	1118-1123
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	28
Issue number	6 R
DOIs	https://doi.org/10.1143/JJAP.28.1118
State	Published - Jun 1989
Externally published	Yes

Keywords

Ellipsometry
Gaas, algaas multilayer transistors
Layer thicknesses
Spectroscopic
Variable angle

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.28.1118

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title = "Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry",

abstract = "Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 舠barrier舡 and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.",

keywords = "Ellipsometry, Gaas, algaas multilayer transistors, Layer thicknesses, Spectroscopic, Variable angle",

author = "Merkel, {Kenneth G.} and Woollam, {John A.}",

year = "1989",

month = jun,

doi = "10.1143/JJAP.28.1118",

language = "English (US)",

volume = "28",

pages = "1118--1123",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "6 R",

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TY - JOUR

T1 - Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry

AU - Merkel, Kenneth G.

AU - Woollam, John A.

PY - 1989/6

Y1 - 1989/6

N2 - Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 舠barrier舡 and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.

AB - Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 舠barrier舡 and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.

KW - Ellipsometry

KW - Gaas, algaas multilayer transistors

KW - Layer thicknesses

KW - Spectroscopic

KW - Variable angle

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 R

ER -

Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry

Abstract

Keywords

ASJC Scopus subject areas

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