Abstract
Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er:PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 650°C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er:PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15-375 K) of Er3+ PL intensity and lifetime are also reported.
Original language | English (US) |
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Pages (from-to) | 137-142 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 422 |
DOIs | |
State | Published - 1996 |
Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering