Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si

R. White; X. Wu; U. Hommerich; F. Namavar; A. M. Cremins-Costa

doi:10.1557/proc-422-137

Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si

R. White, X. Wu, U. Hommerich, F. Namavar, A. M. Cremins-Costa

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Abstract

Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er:PSi) are presented. Erbium was implanted at a dose of 1×10¹⁵ Er/cm² at 380 keV and annealed for 30 minutes at 650°C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er:PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er⁺ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15-375 K) of Er³⁺ PL intensity and lifetime are also reported.

Original language	English (US)
Pages (from-to)	137-142
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	422
DOIs	https://doi.org/10.1557/proc-422-137
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{89c79cbfec2a43a2ba0c58ddb90e0d57,

title = "Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si",

abstract = "Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er:PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 650°C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er:PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15-375 K) of Er3+ PL intensity and lifetime are also reported.",

author = "R. White and X. Wu and U. Hommerich and F. Namavar and Cremins-Costa, {A. M.}",

year = "1996",

doi = "10.1557/proc-422-137",

language = "English (US)",

volume = "422",

pages = "137--142",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

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TY - JOUR

T1 - Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si

AU - White, R.

AU - Wu, X.

AU - Hommerich, U.

AU - Namavar, F.

AU - Cremins-Costa, A. M.

PY - 1996

Y1 - 1996

N2 - Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er:PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 650°C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er:PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15-375 K) of Er3+ PL intensity and lifetime are also reported.

AB - Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er:PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 650°C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er:PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15-375 K) of Er3+ PL intensity and lifetime are also reported.

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U2 - 10.1557/proc-422-137

DO - 10.1557/proc-422-137

M3 - Conference article

AN - SCOPUS:0030388244

SN - 0272-9172

VL - 422

SP - 137

EP - 142

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si

Abstract

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