Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si

R. White, X. Wu, U. Hommerich, F. Namavar, A. M. Cremins-Costa

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er:PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 650°C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er:PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15-375 K) of Er3+ PL intensity and lifetime are also reported.

Original languageEnglish (US)
Pages (from-to)137-142
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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