Charged Particle Radiation Effects on Bulk Silicon and SIMOX SOI Photodiodes

Nader M. Kalkhoran; E. A. Burke; F. Namavar

doi:10.1109/23.489256

Charged Particle Radiation Effects on Bulk Silicon and SIMOX SOI Photodiodes

Nader M. Kalkhoran, E. A. Burke, F. Namavar

Orthopaedic Surgery & Rehabilitation

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6 Scopus citations

Abstract

We report the fabrication of the first n-on-p photodiodes on silicon-on-insulator (SOI) substrates produced using the SIMOX (separation by implantation of oxygen) process. The effects of proton and alpha particle radiation on the optical and electrical performance of these devices have been studied and the results compared to those from bulk Si devices fabricated and tested under identical conditions. In our experiments, the SIMOX SOI photodiodes showed better optical stability and less electrical degradation than their bulk Si counterparts following exposure to charged particles. These results suggest that SOI substrates, in particular SIMOX structures, can potentially be used to fabricate photodetectors and image sensors with improved radiation hardness for space applications.

Original language	English (US)
Pages (from-to)	2082-2088
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	42
Issue number	6
DOIs	https://doi.org/10.1109/23.489256
State	Published - Dec 1995

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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@article{ae7bc34462df4384a5351944f684885f,

title = "Charged Particle Radiation Effects on Bulk Silicon and SIMOX SOI Photodiodes",

abstract = "We report the fabrication of the first n-on-p photodiodes on silicon-on-insulator (SOI) substrates produced using the SIMOX (separation by implantation of oxygen) process. The effects of proton and alpha particle radiation on the optical and electrical performance of these devices have been studied and the results compared to those from bulk Si devices fabricated and tested under identical conditions. In our experiments, the SIMOX SOI photodiodes showed better optical stability and less electrical degradation than their bulk Si counterparts following exposure to charged particles. These results suggest that SOI substrates, in particular SIMOX structures, can potentially be used to fabricate photodetectors and image sensors with improved radiation hardness for space applications.",

author = "Kalkhoran, {Nader M.} and Burke, {E. A.} and F. Namavar",

note = "Funding Information: This work was supported in part by SBIR Phase I Contract No. F29601-93-C-0089 funded by the Air Force Phillips Labs. We would like to acknowledge the assistance of Prof. Q. Kessel for the proton irradiations using the University of Connecticut Van de GraE facilities. We are grateful to Mr. R. Evans for his fruitful comments. We also wish to thank Ms. C. Colerico who assisted in the alpha-particle radiation experiment, to Mrs. Barbara Meier and Mrs. Susan Sullivan who helped prepare this manuscript.",

year = "1995",

month = dec,

doi = "10.1109/23.489256",

language = "English (US)",

volume = "42",

pages = "2082--2088",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Charged Particle Radiation Effects on Bulk Silicon and SIMOX SOI Photodiodes

AU - Kalkhoran, Nader M.

AU - Burke, E. A.

AU - Namavar, F.

N1 - Funding Information: This work was supported in part by SBIR Phase I Contract No. F29601-93-C-0089 funded by the Air Force Phillips Labs. We would like to acknowledge the assistance of Prof. Q. Kessel for the proton irradiations using the University of Connecticut Van de GraE facilities. We are grateful to Mr. R. Evans for his fruitful comments. We also wish to thank Ms. C. Colerico who assisted in the alpha-particle radiation experiment, to Mrs. Barbara Meier and Mrs. Susan Sullivan who helped prepare this manuscript.

PY - 1995/12

Y1 - 1995/12

N2 - We report the fabrication of the first n-on-p photodiodes on silicon-on-insulator (SOI) substrates produced using the SIMOX (separation by implantation of oxygen) process. The effects of proton and alpha particle radiation on the optical and electrical performance of these devices have been studied and the results compared to those from bulk Si devices fabricated and tested under identical conditions. In our experiments, the SIMOX SOI photodiodes showed better optical stability and less electrical degradation than their bulk Si counterparts following exposure to charged particles. These results suggest that SOI substrates, in particular SIMOX structures, can potentially be used to fabricate photodetectors and image sensors with improved radiation hardness for space applications.

AB - We report the fabrication of the first n-on-p photodiodes on silicon-on-insulator (SOI) substrates produced using the SIMOX (separation by implantation of oxygen) process. The effects of proton and alpha particle radiation on the optical and electrical performance of these devices have been studied and the results compared to those from bulk Si devices fabricated and tested under identical conditions. In our experiments, the SIMOX SOI photodiodes showed better optical stability and less electrical degradation than their bulk Si counterparts following exposure to charged particles. These results suggest that SOI substrates, in particular SIMOX structures, can potentially be used to fabricate photodetectors and image sensors with improved radiation hardness for space applications.

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DO - 10.1109/23.489256

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -

Charged Particle Radiation Effects on Bulk Silicon and SIMOX SOI Photodiodes

Abstract

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