Chemical vapor deposition and morphology problems

J. J. Thiart, V. Hlavacek, H. J. Viljoen

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

A model for chemical vapor deposition (CVD) at or near atmospheric pressure is presented. A linear stability analysis of planar growth is presented and a dispersion relation is derived that relates species transport, surface diffusion, surface tension and geometrical factors with the growth of perturbations. Severe fingering requires a description with arc-length as the independent variable. The finite element method is described to solve the evolution of the interface and of the gas-phase species concentration directly above the interface. Some examples are also given.

Original languageEnglish (US)
Pages (from-to)275-293
Number of pages19
JournalThin Solid Films
Volume365
Issue number2
DOIs
StatePublished - Apr 17 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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