TY - GEN
T1 - Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates
AU - Bundesmann, C.
AU - Schubert, M.
AU - Ashkenov, N.
AU - Grundmann, M.
AU - Lippold, G.
AU - Piltz, J.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - The combination of Raman scattering, X-ray fluorescence, and spectroscopic ellipsometry is presented as a new approach for in-situ optical monitoring of multinary semiconductor thin film growth. Our setup allows to determine phonon modes, chemical composition, the fundamental band gap energy, and the absorption coefficient of the semiconductor material immediately during the growth. We demonstrate our new approach exemplarily for CuInSe2, a multinary alloy with complex phase diagram. Process monitoring was performed on solar cell absorber layers deposited on flexible substrates in a roll-to-roll process.
AB - The combination of Raman scattering, X-ray fluorescence, and spectroscopic ellipsometry is presented as a new approach for in-situ optical monitoring of multinary semiconductor thin film growth. Our setup allows to determine phonon modes, chemical composition, the fundamental band gap energy, and the absorption coefficient of the semiconductor material immediately during the growth. We demonstrate our new approach exemplarily for CuInSe2, a multinary alloy with complex phase diagram. Process monitoring was performed on solar cell absorber layers deposited on flexible substrates in a roll-to-roll process.
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U2 - 10.1063/1.1994045
DO - 10.1063/1.1994045
M3 - Conference contribution
AN - SCOPUS:33749460342
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 165
EP - 166
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -