Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates

C. Bundesmann; M. Schubert; N. Ashkenov; M. Grundmann; G. Lippold; J. Piltz

doi:10.1063/1.1994045

Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe₂-based photoabsorber layers on polyimide substrates

C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, J. Piltz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The combination of Raman scattering, X-ray fluorescence, and spectroscopic ellipsometry is presented as a new approach for in-situ optical monitoring of multinary semiconductor thin film growth. Our setup allows to determine phonon modes, chemical composition, the fundamental band gap energy, and the absorption coefficient of the semiconductor material immediately during the growth. We demonstrate our new approach exemplarily for CuInSe₂, a multinary alloy with complex phase diagram. Process monitoring was performed on solar cell absorber layers deposited on flexible substrates in a roll-to-roll process.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	165-166
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994045
State	Published - Jun 30 2005
Externally published	Yes
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	7/26/04 → 7/30/04

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1994045

Cite this

Bundesmann, C., Schubert, M., Ashkenov, N., Grundmann, M., Lippold, G., & Piltz, J. (2005). Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe₂-based photoabsorber layers on polyimide substrates. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 165-166). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994045

Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe₂-based photoabsorber layers on polyimide substrates. / Bundesmann, C.; Schubert, M.; Ashkenov, N. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 165-166 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bundesmann, C, Schubert, M, Ashkenov, N, Grundmann, M, Lippold, G & Piltz, J 2005, Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe₂-based photoabsorber layers on polyimide substrates. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 165-166, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994045

Bundesmann C, Schubert M, Ashkenov N, Grundmann M, Lippold G, Piltz J. Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe₂-based photoabsorber layers on polyimide substrates. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 165-166. (AIP Conference Proceedings). doi: 10.1063/1.1994045

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