Comment on dual-hard-sphere models for liquid semiconductors Si and Ge

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Various generalized dual-hard-sphere (DHS) models are reviewed on calculating the liquid structure factor for semiconductor elements Si and Ge. It is found that the model generalized by Canessa, Mariani and Vignolo gives the best fitting of experimental structure factor Sexp(/c) in the range k < 2kF>(kFthe Fermi wave vector), and all previous models including a new generalized model by the author fail to reproduce the experimental structure factor Scxp(k) of Si and Ge in the whole range of k vector.

Original languageEnglish (US)
Pages (from-to)69-72
Number of pages4
JournalPhysics and Chemistry of Liquids
Volume19
Issue number2
DOIs
StatePublished - Apr 1 1989
Externally publishedYes

Keywords

  • Hard sphere model
  • germanium
  • non-simple metals
  • silicon
  • structure factor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Materials Chemistry

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