Abstract
Various generalized dual-hard-sphere (DHS) models are reviewed on calculating the liquid structure factor for semiconductor elements Si and Ge. It is found that the model generalized by Canessa, Mariani and Vignolo gives the best fitting of experimental structure factor Sexp(/c) in the range k < 2kF>(kFthe Fermi wave vector), and all previous models including a new generalized model by the author fail to reproduce the experimental structure factor Scxp(k) of Si and Ge in the whole range of k vector.
Original language | English (US) |
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Pages (from-to) | 69-72 |
Number of pages | 4 |
Journal | Physics and Chemistry of Liquids |
Volume | 19 |
Issue number | 2 |
DOIs | |
State | Published - Apr 1 1989 |
Externally published | Yes |
Keywords
- Hard sphere model
- germanium
- non-simple metals
- silicon
- structure factor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Materials Chemistry