Summary form only given. The depth of the etching/pulse (I//F ) as a function of fluence (F) is examined. The I//F vs. ln F curves for polymethyl methacrylate (PMMA) have been extended over a larger range of fluences at 193 and 248 nm. At the same time the quantum yields for methyl methacrylate (MMA), the principal polyatomic product from PMMA, were also determined. Three distinct regions in the etch curves are pointed out. Ultrastructure studies of the etched substrate and chemical analysis of the effluent are also discussed.
|Original language||English (US)|
|Number of pages||3|
|State||Published - 1985|
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