Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria

Sandra Moll, Yanwen Zhang, Zihua Zhu, Philip D. Edmondson, F. Namavar, William J. Weber

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Radiation response of nanocrystalline ceria films deposited on a silicon substrate was investigated under a 3-MeV Au-ion irradiation at 300 K. A uniform grain growth cross the ceria films is observed and effective densification of the ceria thin films occurs during irradiation. The Au ion profiling was measured by secondary ion mass spectrometry (SIMS) and compared to the Au ion distribution predicted by the Stopping and Range of Ions in Solids (SRIM) code. It is observed that the Au-ion penetration depth is underestimated in comparison with the SIMS measurements. An overestimation of the electronic stopping power for heavy incident ions in the SRIM program may account for the discrepancies between the calculations and the SIMS experimental results. This work presents an approach to compensate the overestimation of the electronic stopping powers in the SRIM program by adjusting the nanocrystalline ceria target density to better predict the ion implantation profile.

Original languageEnglish (US)
Pages (from-to)93-97
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
StatePublished - 2013


  • Electronic stopping power
  • Ion distribution
  • Irradiation
  • Nanocrystalline ceria

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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