Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria

Sandra Moll; Yanwen Zhang; Zihua Zhu; Philip D. Edmondson; F. Namavar; William J. Weber

doi:10.1016/j.nimb.2012.12.119

Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria

Sandra Moll, Yanwen Zhang, Zihua Zhu, Philip D. Edmondson, F. Namavar, William J. Weber

Orthopaedic Surgery & Rehabilitation

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Radiation response of nanocrystalline ceria films deposited on a silicon substrate was investigated under a 3-MeV Au-ion irradiation at 300 K. A uniform grain growth cross the ceria films is observed and effective densification of the ceria thin films occurs during irradiation. The Au ion profiling was measured by secondary ion mass spectrometry (SIMS) and compared to the Au ion distribution predicted by the Stopping and Range of Ions in Solids (SRIM) code. It is observed that the Au-ion penetration depth is underestimated in comparison with the SIMS measurements. An overestimation of the electronic stopping power for heavy incident ions in the SRIM program may account for the discrepancies between the calculations and the SIMS experimental results. This work presents an approach to compensate the overestimation of the electronic stopping powers in the SRIM program by adjusting the nanocrystalline ceria target density to better predict the ion implantation profile.

Original language	English (US)
Pages (from-to)	93-97
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	307
DOIs	https://doi.org/10.1016/j.nimb.2012.12.119
State	Published - 2013

Keywords

Electronic stopping power
Ion distribution
Irradiation
Nanocrystalline ceria

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2012.12.119

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title = "Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria",

abstract = "Radiation response of nanocrystalline ceria films deposited on a silicon substrate was investigated under a 3-MeV Au-ion irradiation at 300 K. A uniform grain growth cross the ceria films is observed and effective densification of the ceria thin films occurs during irradiation. The Au ion profiling was measured by secondary ion mass spectrometry (SIMS) and compared to the Au ion distribution predicted by the Stopping and Range of Ions in Solids (SRIM) code. It is observed that the Au-ion penetration depth is underestimated in comparison with the SIMS measurements. An overestimation of the electronic stopping power for heavy incident ions in the SRIM program may account for the discrepancies between the calculations and the SIMS experimental results. This work presents an approach to compensate the overestimation of the electronic stopping powers in the SRIM program by adjusting the nanocrystalline ceria target density to better predict the ion implantation profile.",

keywords = "Electronic stopping power, Ion distribution, Irradiation, Nanocrystalline ceria",

author = "Sandra Moll and Yanwen Zhang and Zihua Zhu and Edmondson, {Philip D.} and F. Namavar and Weber, {William J.}",

note = "Funding Information: This work was supported by the Materials Science of Actinides, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences. A portion of the research was performed at the Environmental Molecular Sciences Laboratory (EMSL), a national user facility sponsored by the Department of Energy{\textquoteright}s Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory (PNNL). ",

year = "2013",

doi = "10.1016/j.nimb.2012.12.119",

language = "English (US)",

volume = "307",

pages = "93--97",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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T1 - Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria

AU - Moll, Sandra

AU - Zhang, Yanwen

AU - Zhu, Zihua

AU - Edmondson, Philip D.

AU - Namavar, F.

AU - Weber, William J.

N1 - Funding Information: This work was supported by the Materials Science of Actinides, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences. A portion of the research was performed at the Environmental Molecular Sciences Laboratory (EMSL), a national user facility sponsored by the Department of Energy’s Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory (PNNL).

PY - 2013

Y1 - 2013

N2 - Radiation response of nanocrystalline ceria films deposited on a silicon substrate was investigated under a 3-MeV Au-ion irradiation at 300 K. A uniform grain growth cross the ceria films is observed and effective densification of the ceria thin films occurs during irradiation. The Au ion profiling was measured by secondary ion mass spectrometry (SIMS) and compared to the Au ion distribution predicted by the Stopping and Range of Ions in Solids (SRIM) code. It is observed that the Au-ion penetration depth is underestimated in comparison with the SIMS measurements. An overestimation of the electronic stopping power for heavy incident ions in the SRIM program may account for the discrepancies between the calculations and the SIMS experimental results. This work presents an approach to compensate the overestimation of the electronic stopping powers in the SRIM program by adjusting the nanocrystalline ceria target density to better predict the ion implantation profile.

AB - Radiation response of nanocrystalline ceria films deposited on a silicon substrate was investigated under a 3-MeV Au-ion irradiation at 300 K. A uniform grain growth cross the ceria films is observed and effective densification of the ceria thin films occurs during irradiation. The Au ion profiling was measured by secondary ion mass spectrometry (SIMS) and compared to the Au ion distribution predicted by the Stopping and Range of Ions in Solids (SRIM) code. It is observed that the Au-ion penetration depth is underestimated in comparison with the SIMS measurements. An overestimation of the electronic stopping power for heavy incident ions in the SRIM program may account for the discrepancies between the calculations and the SIMS experimental results. This work presents an approach to compensate the overestimation of the electronic stopping powers in the SRIM program by adjusting the nanocrystalline ceria target density to better predict the ion implantation profile.

KW - Electronic stopping power

KW - Ion distribution

KW - Irradiation

KW - Nanocrystalline ceria

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ER -

Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria

Abstract

Keywords

ASJC Scopus subject areas

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