Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10boron films

L. F. Voss, C. E. Reinhardt, R. T. Graff, A. M. Conway, R. J. Nikolić, Nirmalendu Deo, Chin Li Cheung

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Isotopically enriched 10boron films have been successfully etched in an Electron Cyclotron Resonance (ECR) etching tool using CF4 and SF6 based plasmas. Comparisons between the two are made with regard to etch rate, selectivity to the underlying Si device structure, and morphology of the 10boron post-etching. Our present film etching development is expected to be critical for the fabrication of next generation thermal neutron solid state detectors based on 10boron.

Original languageEnglish (US)
Pages (from-to)821-823
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number3
StatePublished - Jul 21 2009


  • Boron
  • Detector
  • Etch
  • Neutron
  • Plasma
  • Processing

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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