Complexities at the Au/ZrS3(001) interface probed by x-ray photoemission spectroscopy

Archit Dhingra; Alexey Lipatov; Alexander Sinitskii; Peter A. Dowben

doi:10.1088/1361-648X/ac16f8

Complexities at the Au/ZrS₃(001) interface probed by x-ray photoemission spectroscopy

Archit Dhingra, Alexey Lipatov, Alexander Sinitskii, Peter A. Dowben

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Interaction between the Au adlayers and ZrS3(001) has been examined via x-ray photoemission spectroscopy (XPS). The angle-resolved XPS measurements reveal that ZrS3(001) is disulfide (S22-) terminated and the Au thickness-dependent XPS indicates that the observed band bending, for low Au coverage, is consistent with formation of a Schottky barrier at the Au/ZrS3(001) interface. This band bending, however, appears to be suppressed as the thickness of Au adlayer is increased, indicating varying interfacial interactions at the Au/ZrS3(001) interface. Such complex interface effects between Au and ZrS3(001) may explain the observed non-ohmic I-V characteristics for a ZrS3-based device, and could suppress current injection.

Original language	English (US)
Article number	434001
Journal	Journal of Physics Condensed Matter
Volume	33
Issue number	43
DOIs	https://doi.org/10.1088/1361-648X/ac16f8
State	Published - Oct 2021

Keywords

2D materials
quasi-1D trichalcogenides
Schottky-barrier formation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1088/1361-648X/ac16f8

Cite this

@article{141e41b130d6492cb4721f0db8efa462,

title = "Complexities at the Au/ZrS3(001) interface probed by x-ray photoemission spectroscopy",

abstract = "Interaction between the Au adlayers and ZrS3(001) has been examined via x-ray photoemission spectroscopy (XPS). The angle-resolved XPS measurements reveal that ZrS3(001) is disulfide (S22-) terminated and the Au thickness-dependent XPS indicates that the observed band bending, for low Au coverage, is consistent with formation of a Schottky barrier at the Au/ZrS3(001) interface. This band bending, however, appears to be suppressed as the thickness of Au adlayer is increased, indicating varying interfacial interactions at the Au/ZrS3(001) interface. Such complex interface effects between Au and ZrS3(001) may explain the observed non-ohmic I-V characteristics for a ZrS3-based device, and could suppress current injection.",

keywords = "2D materials, quasi-1D trichalcogenides, Schottky-barrier formation",

author = "Archit Dhingra and Alexey Lipatov and Alexander Sinitskii and Dowben, {Peter A.}",

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language = "English (US)",

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journal = "Journal of Physics Condensed Matter",

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T1 - Complexities at the Au/ZrS3(001) interface probed by x-ray photoemission spectroscopy

AU - Dhingra, Archit

AU - Lipatov, Alexey

AU - Sinitskii, Alexander

AU - Dowben, Peter A.

PY - 2021/10

Y1 - 2021/10

N2 - Interaction between the Au adlayers and ZrS3(001) has been examined via x-ray photoemission spectroscopy (XPS). The angle-resolved XPS measurements reveal that ZrS3(001) is disulfide (S22-) terminated and the Au thickness-dependent XPS indicates that the observed band bending, for low Au coverage, is consistent with formation of a Schottky barrier at the Au/ZrS3(001) interface. This band bending, however, appears to be suppressed as the thickness of Au adlayer is increased, indicating varying interfacial interactions at the Au/ZrS3(001) interface. Such complex interface effects between Au and ZrS3(001) may explain the observed non-ohmic I-V characteristics for a ZrS3-based device, and could suppress current injection.

AB - Interaction between the Au adlayers and ZrS3(001) has been examined via x-ray photoemission spectroscopy (XPS). The angle-resolved XPS measurements reveal that ZrS3(001) is disulfide (S22-) terminated and the Au thickness-dependent XPS indicates that the observed band bending, for low Au coverage, is consistent with formation of a Schottky barrier at the Au/ZrS3(001) interface. This band bending, however, appears to be suppressed as the thickness of Au adlayer is increased, indicating varying interfacial interactions at the Au/ZrS3(001) interface. Such complex interface effects between Au and ZrS3(001) may explain the observed non-ohmic I-V characteristics for a ZrS3-based device, and could suppress current injection.

KW - 2D materials

KW - quasi-1D trichalcogenides

KW - Schottky-barrier formation

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