Abstract
A photoluminescence excitation (PLE) study was performed of Er-implanted porous Si with two different porosities. Erbium was implanted at a dose of 1 × 1015 cm-2 at 380 keV and the samples were annealed for 30 min at temperatures from 650 to 850 °C. We observed that PLE spectra from Er3+ at 1.54 μm are nearly identical to those from the visible-emitting porous Si layers. Our results provide the first direct experimental evidence that infrared photoluminescence at 1.54 μm arises from Er3+ ions in porous Si and that ions are excited through the recombination of excess carriers spatially confined in Si nanograms.
Original language | English (US) |
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Pages (from-to) | 1903-1905 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 13 |
DOIs | |
State | Published - Sep 23 1996 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)