Correlation between visible and infrared (1.54 μm) luminescence from Er-implanted porous silicon

X. Wu; U. Hömmerich; F. Namavar; A. M. Cremins-Costa

doi:10.1063/1.117616

Correlation between visible and infrared (1.54 μm) luminescence from Er-implanted porous silicon

X. Wu, U. Hömmerich, F. Namavar, A. M. Cremins-Costa

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Abstract

A photoluminescence excitation (PLE) study was performed of Er-implanted porous Si with two different porosities. Erbium was implanted at a dose of 1 × 10¹⁵ cm^-2 at 380 keV and the samples were annealed for 30 min at temperatures from 650 to 850 °C. We observed that PLE spectra from Er³⁺ at 1.54 μm are nearly identical to those from the visible-emitting porous Si layers. Our results provide the first direct experimental evidence that infrared photoluminescence at 1.54 μm arises from Er³⁺ ions in porous Si and that ions are excited through the recombination of excess carriers spatially confined in Si nanograms.

Original language	English (US)
Pages (from-to)	1903-1905
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	13
DOIs	https://doi.org/10.1063/1.117616
State	Published - Sep 23 1996
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.117616

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abstract = "A photoluminescence excitation (PLE) study was performed of Er-implanted porous Si with two different porosities. Erbium was implanted at a dose of 1 × 1015 cm-2 at 380 keV and the samples were annealed for 30 min at temperatures from 650 to 850 °C. We observed that PLE spectra from Er3+ at 1.54 μm are nearly identical to those from the visible-emitting porous Si layers. Our results provide the first direct experimental evidence that infrared photoluminescence at 1.54 μm arises from Er3+ ions in porous Si and that ions are excited through the recombination of excess carriers spatially confined in Si nanograms.",

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AU - Wu, X.

AU - Hömmerich, U.

AU - Namavar, F.

AU - Cremins-Costa, A. M.

PY - 1996/9/23

Y1 - 1996/9/23

N2 - A photoluminescence excitation (PLE) study was performed of Er-implanted porous Si with two different porosities. Erbium was implanted at a dose of 1 × 1015 cm-2 at 380 keV and the samples were annealed for 30 min at temperatures from 650 to 850 °C. We observed that PLE spectra from Er3+ at 1.54 μm are nearly identical to those from the visible-emitting porous Si layers. Our results provide the first direct experimental evidence that infrared photoluminescence at 1.54 μm arises from Er3+ ions in porous Si and that ions are excited through the recombination of excess carriers spatially confined in Si nanograms.

AB - A photoluminescence excitation (PLE) study was performed of Er-implanted porous Si with two different porosities. Erbium was implanted at a dose of 1 × 1015 cm-2 at 380 keV and the samples were annealed for 30 min at temperatures from 650 to 850 °C. We observed that PLE spectra from Er3+ at 1.54 μm are nearly identical to those from the visible-emitting porous Si layers. Our results provide the first direct experimental evidence that infrared photoluminescence at 1.54 μm arises from Er3+ ions in porous Si and that ions are excited through the recombination of excess carriers spatially confined in Si nanograms.

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Correlation between visible and infrared (1.54 μm) luminescence from Er-implanted porous silicon

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