TY - GEN
T1 - Covering codes for multilevel flash memories
AU - Haymaker, Kathryn
AU - Kelley, Christine A.
PY - 2012
Y1 - 2012
N2 - Write-once-memory (WOM) and flash codes are used to increase the number of writes in flash memories in order to improve the lifetime of flash-based storage systems. An early construction method of binary WOM codes used cosets of a binary linear code in the writing process, and the covering radius of the code was used to determine the number of writes possible. In this paper, we show how to combine this method with nonbinary codes for multilevel flash cells, and introduce a new family of ternary WOM codes using the finite Euclidean geometry EG(m, 3).
AB - Write-once-memory (WOM) and flash codes are used to increase the number of writes in flash memories in order to improve the lifetime of flash-based storage systems. An early construction method of binary WOM codes used cosets of a binary linear code in the writing process, and the covering radius of the code was used to determine the number of writes possible. In this paper, we show how to combine this method with nonbinary codes for multilevel flash cells, and introduce a new family of ternary WOM codes using the finite Euclidean geometry EG(m, 3).
UR - http://www.scopus.com/inward/record.url?scp=84876271052&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876271052&partnerID=8YFLogxK
U2 - 10.1109/ACSSC.2012.6489155
DO - 10.1109/ACSSC.2012.6489155
M3 - Conference contribution
AN - SCOPUS:84876271052
SN - 9781467350518
T3 - Conference Record - Asilomar Conference on Signals, Systems and Computers
SP - 942
EP - 949
BT - Conference Record of the 46th Asilomar Conference on Signals, Systems and Computers, ASILOMAR 2012
T2 - 46th Asilomar Conference on Signals, Systems and Computers, ASILOMAR 2012
Y2 - 4 November 2012 through 7 November 2012
ER -