Covering codes for multilevel flash memories

Kathryn Haymaker, Christine A. Kelley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Write-once-memory (WOM) and flash codes are used to increase the number of writes in flash memories in order to improve the lifetime of flash-based storage systems. An early construction method of binary WOM codes used cosets of a binary linear code in the writing process, and the covering radius of the code was used to determine the number of writes possible. In this paper, we show how to combine this method with nonbinary codes for multilevel flash cells, and introduce a new family of ternary WOM codes using the finite Euclidean geometry EG(m, 3).

Original languageEnglish (US)
Title of host publicationConference Record of the 46th Asilomar Conference on Signals, Systems and Computers, ASILOMAR 2012
Pages942-949
Number of pages8
DOIs
StatePublished - 2012
Event46th Asilomar Conference on Signals, Systems and Computers, ASILOMAR 2012 - Pacific Grove, CA, United States
Duration: Nov 4 2012Nov 7 2012

Publication series

NameConference Record - Asilomar Conference on Signals, Systems and Computers
ISSN (Print)1058-6393

Other

Other46th Asilomar Conference on Signals, Systems and Computers, ASILOMAR 2012
CountryUnited States
CityPacific Grove, CA
Period11/4/1211/7/12

ASJC Scopus subject areas

  • Signal Processing
  • Computer Networks and Communications

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  • Cite this

    Haymaker, K., & Kelley, C. A. (2012). Covering codes for multilevel flash memories. In Conference Record of the 46th Asilomar Conference on Signals, Systems and Computers, ASILOMAR 2012 (pp. 942-949). [6489155] (Conference Record - Asilomar Conference on Signals, Systems and Computers). https://doi.org/10.1109/ACSSC.2012.6489155