CuIn1-xAlxS2 thin films prepared by sulfurization of metallic precursors

J. Olejníček, L. E. Flannery, S. A. Darveau, C. L. Exstrom, Š Kment, N. J. Ianno, R. J. Soukup

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20 Scopus citations


CuIn1-xAlxS2 thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu-In-Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 , c = 11.02 } for CuInS2 to {a = 5.30 , c = 10.36 } for CuAlS2. No unwanted phases such as Cu 2-xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A1 phonon frequency varied nonlinearly from 294 cm-1 (CuInS2) to 314 cm -1 (CuAlS2).

Original languageEnglish (US)
Pages (from-to)10020-10024
Number of pages5
JournalJournal of Alloys and Compounds
Issue number41
StatePublished - Oct 13 2011
Externally publishedYes


  • CIAS
  • Chalcopyrites
  • Cu(In,Al)S
  • CuInAlS
  • Raman spectroscopy
  • Solar cells
  • XRD

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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