Current injection mechanism for porous-silicon transparent surface light-emitting diodes

H. Paul Maruska, F. Namavar, N. M. Kalkhoran

Research output: Contribution to journalArticlepeer-review

111 Scopus citations


We present a model for the injection of minority carriers into porous silicon films which results in visible dc electroluminescence. A thin interfacial dielectric region is postulated between the surface of the porous silicon layer and a transparent conductive oxide on the surface, which allows alignment of states between the two corresponding conduction bands of these materials under bias, and hence, overlap of electron wave functions and the passage of a tunneling current. Interface state densities are calculated and a parasitic nonradiative shunt current through such states is discussed.

Original languageEnglish (US)
Pages (from-to)1338-1340
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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