Current injection mechanism for porous-silicon transparent surface light-emitting diodes

H. Paul Maruska, F. Namavar, N. M. Kalkhoran

Research output: Contribution to journalArticle

105 Scopus citations

Abstract

We present a model for the injection of minority carriers into porous silicon films which results in visible dc electroluminescence. A thin interfacial dielectric region is postulated between the surface of the porous silicon layer and a transparent conductive oxide on the surface, which allows alignment of states between the two corresponding conduction bands of these materials under bias, and hence, overlap of electron wave functions and the passage of a tunneling current. Interface state densities are calculated and a parasitic nonradiative shunt current through such states is discussed.

Original languageEnglish (US)
Pages (from-to)1338-1340
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number11
DOIs
StatePublished - Dec 1 1992
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Current injection mechanism for porous-silicon transparent surface light-emitting diodes'. Together they form a unique fingerprint.

  • Cite this