Abstract
This paper addresses the initial stage of epitaxial growth of SiC on thin (about 300 angstroms) and thick (2000 angstroms) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.
Original language | English (US) |
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Pages (from-to) | 357-362 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 410 |
State | Published - 1996 |
Event | Proceedings of the 1995 Fall MRS Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering