CVD growth of SiC on ultrathin SiO2: A step towards development of a compliant substrate for SiC and III-V compounds

Freydoon Namavar; P. Colter; A. Cremins-Costa; E. Gagnon; D. Perry

CVD growth of SiC on ultrathin SiO₂: A step towards development of a compliant substrate for SiC and III-V compounds

Freydoon Namavar, P. Colter, A. Cremins-Costa, E. Gagnon, D. Perry

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Abstract

This paper addresses the initial stage of epitaxial growth of SiC on thin (about 300 angstroms) and thick (2000 angstroms) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO₂ (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.

Original language	English (US)
Pages (from-to)	357-362
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	410
State	Published - 1996
Event	Proceedings of the 1995 Fall MRS Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "CVD growth of SiC on ultrathin SiO2: A step towards development of a compliant substrate for SiC and III-V compounds",

abstract = "This paper addresses the initial stage of epitaxial growth of SiC on thin (about 300 angstroms) and thick (2000 angstroms) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.",

author = "Freydoon Namavar and P. Colter and A. Cremins-Costa and E. Gagnon and D. Perry",

year = "1996",

language = "English (US)",

volume = "410",

pages = "357--362",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 Fall MRS Symposium ; Conference date: 27-11-1995 Through 30-11-1995",

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TY - JOUR

T1 - CVD growth of SiC on ultrathin SiO2

T2 - Proceedings of the 1995 Fall MRS Symposium

AU - Namavar, Freydoon

AU - Colter, P.

AU - Cremins-Costa, A.

AU - Gagnon, E.

AU - Perry, D.

PY - 1996

Y1 - 1996

N2 - This paper addresses the initial stage of epitaxial growth of SiC on thin (about 300 angstroms) and thick (2000 angstroms) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.

AB - This paper addresses the initial stage of epitaxial growth of SiC on thin (about 300 angstroms) and thick (2000 angstroms) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.

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M3 - Conference article

AN - SCOPUS:0029717765

SN - 0272-9172

VL - 410

SP - 357

EP - 362

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 27 November 1995 through 30 November 1995

ER -

CVD growth of SiC on ultrathin SiO₂: A step towards development of a compliant substrate for SiC and III-V compounds

Abstract

ASJC Scopus subject areas

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