CVD growth of SiC on ultrathin SiO2: A step towards development of a compliant substrate for SiC and III-V compounds

Freydoon Namavar, P. Colter, A. Cremins-Costa, E. Gagnon, D. Perry

Research output: Contribution to journalConference article

Abstract

This paper addresses the initial stage of epitaxial growth of SiC on thin (about 300 angstroms) and thick (2000 angstroms) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.

Original languageEnglish (US)
Pages (from-to)357-362
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume410
StatePublished - 1996
EventProceedings of the 1995 Fall MRS Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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