Abstract
The annealing behavior of the high-dose arsenic implanted silicon (double energy implantation: 150 kev, 1. 05 multiplied by 10**1**6 cm** minus **2 and 60 kev 3. 5 multiplied by 10**1**5 cm minus //2) using cw Ar** plus -Laser irradiation is investigated. The annealing characteristics depend upon the substrate preheating temperature and laser power. The experimental results show that a higher electrical activation can be obtained under suitable substrate preheating temperature and laser power. Above preheating the electrical activation is reduced due to the relaxation of metastable concentration; below preheating serious damages on the wafer, even fine cracks, can be produced due to higher laser power. In high-dose antimony implanted silicon (150 kev, 10**1**6 cm** minus **2) the same phenomena are also found.
Original language | English (US) |
---|---|
Pages (from-to) | 641-647 |
Number of pages | 7 |
Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
Volume | 6 |
Issue number | 6 |
State | Published - Nov 1985 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry