TY - JOUR
T1 - Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal
AU - Bian, Mengying
AU - Zhu, Liang
AU - Wang, Xiao
AU - Choi, Junho
AU - Chopdekar, Rajesh V.
AU - Wei, Sichen
AU - Wu, Lishu
AU - Huai, Chang
AU - Marga, Austin
AU - Yang, Qishuo
AU - Li, Yuguang C.
AU - Yao, Fei
AU - Yu, Ting
AU - Crooker, Scott A.
AU - Cheng, Xuemei M.
AU - Sabirianov, Renat F.
AU - Zhang, Shengbai
AU - Lin, Junhao
AU - Hou, Yanglong
AU - Zeng, Hao
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/4/27
Y1 - 2022/4/27
N2 - Realizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here, the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition is reported, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few tens of micrometers, is fully commensurate with that of WSe2 via 3 × 3 (Cr5Te8)/7 × 7 (WSe2) supercell matching, forming a single-crystalline moiré superlattice. This work establishes a conceptually distinct paradigm of thin-film epitaxy, termed “dative epitaxy”, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.
AB - Realizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here, the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition is reported, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few tens of micrometers, is fully commensurate with that of WSe2 via 3 × 3 (Cr5Te8)/7 × 7 (WSe2) supercell matching, forming a single-crystalline moiré superlattice. This work establishes a conceptually distinct paradigm of thin-film epitaxy, termed “dative epitaxy”, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.
KW - commensurate lattices
KW - dative bonds
KW - epitaxy
KW - moiré superlattices
KW - van der Waals interaction
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U2 - 10.1002/adma.202200117
DO - 10.1002/adma.202200117
M3 - Article
C2 - 35236008
AN - SCOPUS:85126777879
SN - 0935-9648
VL - 34
JO - Advanced Materials
JF - Advanced Materials
IS - 17
M1 - 2200117
ER -