The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)