Deformation potentials of the E 1 (TO) and E 2 modes of InN

V. Darakchieva; P. P. Paskov; E. Valcheva; T. Paskova; B. Monemar; M. Schubert; H. Lu; W. J. Schaff

doi:10.1063/1.1738520

Deformation potentials of the E ₁ (TO) and E ₂ modes of InN

V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Schubert, H. Lu, W. J. Schaff

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Abstract

The determination of deformation potentials of E ₁(TO) and E ₂ modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E ₁(TO) mode was 477.9 cm ^-1 and 491.9 cm ^-1 for the E ₂ modes.

Original language	English (US)
Pages (from-to)	3636-3638
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1738520
State	Published - May 3 2004
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1738520

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abstract = "The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Gr{\"u}neisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.",

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T1 - Deformation potentials of the E 1 (TO) and E 2 modes of InN

AU - Darakchieva, V.

AU - Paskov, P. P.

AU - Valcheva, E.

AU - Paskova, T.

AU - Monemar, B.

AU - Schubert, M.

AU - Lu, H.

AU - Schaff, W. J.

PY - 2004/5/3

Y1 - 2004/5/3

N2 - The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.

AB - The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Deformation potentials of the E ₁ (TO) and E ₂ modes of InN

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