Deformation potentials of the E 1 (TO) and E 2 modes of InN

V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Schubert, H. Lu, W. J. Schaff

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.

Original languageEnglish (US)
Pages (from-to)3636-3638
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - May 3 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Deformation potentials of the E <sub>1</sub> (TO) and E <sub>2</sub> modes of InN'. Together they form a unique fingerprint.

  • Cite this

    Darakchieva, V., Paskov, P. P., Valcheva, E., Paskova, T., Monemar, B., Schubert, M., Lu, H., & Schaff, W. J. (2004). Deformation potentials of the E 1 (TO) and E 2 modes of InN. Applied Physics Letters, 84(18), 3636-3638. https://doi.org/10.1063/1.1738520