Dielectric and magnetic birefringence in low-chlorine-doped n-type Zn 1-xMnxSe

M. F. Saenger, M. Hetterich, T. Hofmann, R. D. Kirby, D. J. Sellmyer, M. Schubert

Research output: Contribution to journalConference articlepeer-review


Generalized spectroscopic ellipsometry over the spectral range from 1.24 to 3.34 eV is used to investigate a set of molecular beam epitaxy grown lowchlorine-doped n-type Zn1-xMnxSe films on (001)-oriented GaAs for x = 0.0, 0.02, 0.14 and 0.28. We present evidence for intrinsic optical anisotropy in dependence of the Mn concentration caused by wurtzitestructure domain formation. We employ a previously established dielectric function model that accounts for band-gap transition energy splitting in cubic semiconductors [Phys. Rev. B 60, 16618 (1999)]. Room temperature magneto-optic generalized ellipsometry in the Kerrconfiguration reveals the sp-d exchange energy splitting parameters upon expanding our anisotropy model by inclusion of chiral spin-polarized band-to-band transition contributions. (Graph Presented) Normalized Mueller matrix M23 spectra reflecting magnetooptic birefringence in Zn1-xMnxSe thin films. The spectra are shifted in steps of 0.01 with respect to the ZnSe thin film spectrum. The arrows denote the band-gap energy E0.

Original languageEnglish (US)
Pages (from-to)1007-1011
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number5
StatePublished - 2008
Event4th International Conference on Spectroscopic Ellipsometry, ICSE4 - Stockholm, Sweden
Duration: Jun 11 2007Jun 15 2007

ASJC Scopus subject areas

  • Condensed Matter Physics


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