Abstract
Generalized spectroscopic ellipsometry over the spectral range from 1.24 to 3.34 eV is used to investigate a set of molecular beam epitaxy grown lowchlorine-doped n-type Zn1-xMnxSe films on (001)-oriented GaAs for x = 0.0, 0.02, 0.14 and 0.28. We present evidence for intrinsic optical anisotropy in dependence of the Mn concentration caused by wurtzitestructure domain formation. We employ a previously established dielectric function model that accounts for band-gap transition energy splitting in cubic semiconductors [Phys. Rev. B 60, 16618 (1999)]. Room temperature magneto-optic generalized ellipsometry in the Kerrconfiguration reveals the sp-d exchange energy splitting parameters upon expanding our anisotropy model by inclusion of chiral spin-polarized band-to-band transition contributions. (Graph Presented) Normalized Mueller matrix M23 spectra reflecting magnetooptic birefringence in Zn1-xMnxSe thin films. The spectra are shifted in steps of 0.01 with respect to the ZnSe thin film spectrum. The arrows denote the band-gap energy E0.
Original language | English (US) |
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Pages (from-to) | 1007-1011 |
Number of pages | 5 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 5 |
Issue number | 5 |
DOIs | |
State | Published - 2008 |
Event | 4th International Conference on Spectroscopic Ellipsometry, ICSE4 - Stockholm, Sweden Duration: Jun 11 2007 → Jun 15 2007 |
ASJC Scopus subject areas
- Condensed Matter Physics