Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition

C. Bundesmann, O. Buiu, S. Hall, M. Schubert

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Dielectric constants and long-wavelength optical phonon modes of amorphous hafnium aluminate films with a maximum aluminum content of 19 at. % are studied by infrared spectroscopic ellipsometry (IRSE). The hafnium aluminate films were prepared by metal organic chemical vapor deposition on silicon substrates. IRSE revealed one polar lattice mode and one impurity-type mode, which show all a systematic shift in frequency with varying Al content. The static dielectric constant decreases from 10.1 for 4.6 at. % Al to 8.1 for 19 at. % Al. The absolute values were found to be between 50% and 70% smaller than the values obtained from electrical measurements.

Original languageEnglish (US)
Article number121916
JournalApplied Physics Letters
Volume91
Issue number12
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this